2SA1322
2SA1322 is SILICON PNP EPITAXIAL TYPE TRANSISTOR manufactured by Toshiba.
FEATURES
. High Voltage : VCEo=-250V
. Low C re
: 2.2p F(Max.)
. plementary to 2SC3335
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO Vc EO VEBO ic ICP IB
Tj
.
Tstg
RATING -250 -250 -5 -50 -100 -20 1.2 5.0 150
-55-150
UNIT V V V m A m A W
°C °C
»l
!
2.3 r
^t 1 ?,
< 2
C2' i,
1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE
TO-126
TOSHI BA
2-8P1A
Weight : 0.72g Mounting Kit No. AC46C
ELECTRICAL CHARACTERISTICS...
