Datasheet4U Logo Datasheet4U.com

2SA1322 - SILICON PNP EPITAXIAL TYPE TRANSISTOR

Key Features

  • . High Voltage : VCEo=-250V . Low C re : 2.2pF(Max. ) . Complementary to 2SC3335 Unit in mm.

📥 Download Datasheet

Datasheet Details

Part number 2SA1322
Manufacturer Toshiba
File Size 118.32 KB
Description SILICON PNP EPITAXIAL TYPE TRANSISTOR
Datasheet download datasheet 2SA1322 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. FEATURES . High Voltage : VCEo=-250V . Low C re : 2.2pF(Max.) . Complementary to 2SC3335 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL VCBO VcEO VEBO ic ICP IB PC Tj . Tstg RATING -250 -250 -5 -50 -100 -20 1.2 5.0 150 -55-150 UNIT V V V mA mA W °C °C 2.3 »l ! 2.3 r ^t 1 ?, XI < 2 C2' i, 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO-126 TOSHI BA 2-8P1A Weight : 0.72g Mounting Kit No.