Datasheet4U Logo Datasheet4U.com

2SA1412-Z - NPN Transistor

Description

With TO-252(DPAK) packaging Excellent linearity of hFE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converte

📥 Download Datasheet

Datasheet preview – 2SA1412-Z

📁 Similar Datasheet

  • 2SA1412-Z - PNP Transistor (NEC)
  • 2SA1412-Z - Transistor (Kexin)
  • 2SA1412-Z - SILICON POWER TRANSISTOR (Renesas)
  • 2SA1412 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
  • 2SA1411 - Transistor (ETC)
  • 2SA1411 - Transistor (Kexin)
  • 2SA1411 - Transistor (TY Semiconductor)
  • 2SA1413 - PNP SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
  • 2SA1413 - PNP Silicon Transistors (NEC Electronics)
  • 2SA1413-Z - PNP Transistor (NEC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·High current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -500 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -2 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1412-Z isc website：www.iscsemi.
Published: |