| Part number | 2SA1412-Z |
|---|---|
| Datasheet | 2SA1412-Z-INCHANGE.pdf |
| File Size | 194.89 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Breakdown Voltage IC=-1mA; IB=0 BVCEO Collector-Emitter Breakdown Voltage IC=-10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1412-Z | PNP Transistor | NEC |
 |
2SA1412-Z | PNP Silicon Transistor | Kexin |
 |
2SA1412-Z | PNP SILICON TRIPLE DIFFUSED TRANSISTOR | Renesas |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA1413-Z | PNP Transistor |
| 2SA1400Z | PNP Transistor |
| 2SA1441 | Silicon PNP Power Transistor |
| 2SA1486 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
