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2SA1822 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage Excellent switching time 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High voltage switching applications.

High speed DC-DC converter application ABSOLUTE

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage ·Excellent switching time ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications. ·High speed DC-DC converter application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -0.5 A 2 W 25 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1822 isc website： www.iscsemi.