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2SA762 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min) Low Collector Saturation Voltage

and reliable operation.

Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA762 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 23 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.