2SA968 Overview
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA968 A B TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage CONDITIONS IC= -10mA ; IB= 0 2SA968 2SA968A 2SA968B IE= -1mA ; IC= 0 MIN -160 -180 -200 -5 TYP.

