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2SB1034 - PNP Transistor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.