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2SB1098 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low speed switching industrial Low frequency power amplifie

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low speed switching industrial ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -100 V -100 V -7 V -5 A -8 A -0.