2SB1098 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-3A; IB=-3mA VCB=-100V ;IE=0 VEB=-5V; VCE=-2V 2000 500 MIN 2SB1098 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP.