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2SB1135 - PNP Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -4A Complement to Type 2SD1668 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay driver

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isc Silicon PNP Power Transistor 2SB1135 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.)@ IC= -4A ·Complement to Type 2SD1668 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, and other general high-current switching applications.
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