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2SB1135 Datasheet Preview

2SB1135 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
2SB1135
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max.)@ IC= -4A
·Complement to Type 2SD1668
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for relay drivers, high-speed inverters, and other
general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-12
A
2
W
30
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SB1135 Datasheet Preview

2SB1135 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB= -40V; IE=0
IEBO
Emitter Cutoff Current
VEB= -4V; IC=0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -5A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
IC= -2A, IB1= -IB2= -0.2A
tf
Fall Time
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
2SB1135
MIN TYP. MAX UNIT
-50
V
-60
V
-6
V
-0.4 V
-100 μA
-100 μA
70
280
30
10
MHz
0.2
μs
0.7
μs
0.1
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SB1135
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SB1135 Datasheet PDF





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