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2SB1135 - PNP Transistor

Key Features

  • Low-saturation collector-to-emitter voltage : VCE(sat)=.
  • 0.4V max.
  • Wide ASO leading to high resistance to breakdown.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1135/2SD1668] ( ) : 2SB1135 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Juncti.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SB1131 PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.4V max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting.