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2SB1131 - PNP Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity.
  • Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta =.

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Ordering number:2420B PNP Epitaxial Planar Silicon Transistor 2SB1131 Strobe, High-Current Switching Applications Applications · Strobes, power supplies, relay drivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching time.