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2SB1145 - PNP Transistor

General Description

High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -1.5A Good Linearity of hFE With TO-220F package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current

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isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-220F package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current driver applications. ·Power driver applications.