High DC Current Gain-
: hFE= 2000(Min.)@IC= -1.5A
Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -1.5A
Good Linearity of hFE
With TO-220F package
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High current
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isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-220F package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current driver applications. ·Power driver applications.