High DC Current Gain-
: hFE= 2000(Min.)@IC= -1.5A
Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Max)@IC= -1.5A
Good Linearity of hFE
With TO-126 package
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Operate from I
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isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 2000(Min.)@IC= -1.5A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.2V(Max)@IC= -1.5A ·Good Linearity of hFE ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Operate from Ic without predriver applications. ·Hammer driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM
PC
TJ Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ Tc=25℃ Junction Temperature
Storage Temperature Range
-100
V
-100
V
-8
V
-3
A
-5
A
1.
2SB1149 Datasheet
