| Part number | 2SB1185 |
|---|---|
| Datasheet | 2SB1185-INCHANGE.pdf |
| File Size | 213.93 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A ·plement to Type 2SD1762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB1185 | Power Transistor | Rohm |
 |
2SB1185 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB1185 | Power Transistor | GME |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB1186 | PNP Transistor |
| 2SB1186A | PNP Transistor |
| 2SB1187 | PNP Transistor |
| 2SB1101 | PNP Transistor |
| 2SB1102 | PNP Transistor |
| 2SB1103 | PNP Transistor |
| 2SB1105 | PNP Transistor |
| 2SB1106 | PNP Transistor |
| 2SB1133 | PNP Transistor |
| 2SB1134 | PNP Transistor |
