2SB1185
2SB1185 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
- Good Linearity of h FE
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -2A
- plement to Type 2SD1762
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications.
- Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-3
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
Junction Temperature
-4.5...
