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2SB1205 - PNP Transistor

General Description

Large current capacity Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe,voltage regulations,relay drivers,lamp drivers ABSOLUTE

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isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacity ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobe,voltage regulations,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC ICP IB PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @ TC=25℃ Collector Power Dissipation @ Ta=25℃ Junction Temperature Tstg Storage Temperature Range -25 V -20 V -5 V -5 A -8 A -0.5 A 10 W 1.0 W 150 ℃ -55~150 ℃ 2SB1205 isc website：www.