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2SB1205 - Bipolar Transistor

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Fast switching speed.
  • Large current capacity.
  • Small and slim package making it easy to make 2SB1205-applied sets smaller Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings Unit --25 V --20 V --5 V -.

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Datasheet Details

Part number 2SB1205
Manufacturer onsemi
File Size 291.95 KB
Description Bipolar Transistor
Datasheet download datasheet 2SB1205 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN2114C 2SB1205 Bipolar Transistor –20V, –5A, Low VCE(sat), PNP Single TP/TP-FA http://onsemi.com Applications • Flash, voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Low saturation voltage • Fast switching speed • Large current capacity • Small and slim package making it easy to make 2SB1205-applied sets smaller Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Conditions Ratings Unit --25 V --20 V --5 V --5 A --8 A Package Dimensions unit : mm (typ) 7518-003 Package Dimensions unit : mm (typ) 7003-003 Continued on next page. 6.5 5.0 4 2.