INCHANGE Semiconductor
Isc Silicon PNP Power Transistor
2SB1273
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-60
V
-60
V
-6
V
-1.0
V
-1.0
V
-0.1 mA
-0.1 mA
70
280
20
60
pF
100
MHz
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
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