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2SB1548 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage Complement to Type 2SD2374 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage ·Complement to Type 2SD2374 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -5 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1548 isc website：www.iscsemi.