2SB1606 - PNP Transistor

Inchange Semiconductor

General Description

High Collector current Ic Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -4A Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable ope

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2SB1606 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1606
Manufacturer	Inchange Semiconductor
File Size	211.18 KB
Description	PNP Transistor
Datasheet	2SB1606 Datasheet

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector current Ic ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -4A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching and general purpose applications.