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isc Silicon PNP Power Transistor
DESCRIPTION ·High DC current amplifier rate
hFE≥100@VCE=-5V,IC=-0.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The 2SB1669-Z is a power transistor that can be directly driven
from the output of an IC.This transistor is ideal for OA and FA equipment such as motor and solenoid drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
ICP
Collector Current-Pulse
-6
A
PC
Total Power Dissipation @ Ta=25℃
1.
2SB1669 Datasheet
