Datasheet Details
| Part number | 2SB1669 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.64 KB |
| Description | PNP Transistor |
| Datasheet |
 2SB1669 Datasheet
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| Part number | 2SB1669 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.64 KB |
| Description | PNP Transistor |
| Datasheet |
2SB1669 Datasheet
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·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as motor and solenoid drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -6 A PC Total Power Dissipation @ Ta=25℃ 1.5 W PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1669 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1669 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Gain fT Transition frequency Cob Collector output capacitance NOTE:Pulse test PW≤350us,duty cycle ≤2% Switching Times ton Turn-on Time CONDITIONS IC= -3.0A;
IB= -300mA IC= -3.0A;
IB= -300mA VCB= -60V;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1669 | PNP Transistor | NEC |
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2SB1669-Z | Silicon PNP Power Transistor | Inchange Semiconductor |
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