Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -50V(Min)
Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max.) @IC= -3A
Complement to Type 2SD234
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max.) @IC= -3A ·Complement to Type 2SD234 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @Tc=25℃
TJ
Junction Temperature
-50
V
-50
V
-5
V
-3
A
-0.3
A
1.5 W
25
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SB434
isc website：www.
2SB434 Datasheet
