2SB513
2SB513 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- Low Collector Saturation Voltage
- plement to Type 2SD366
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-3
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS...
