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2SB519 - PNP Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -110V(Min) Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -6A Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-p

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB519 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -110V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -6A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage Temperature -10 A 80 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.
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