2SB519
2SB519 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -110V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -6A
- Wide area of safe operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-110
VEBO
Emitter-Base Voltage
-8
Collector Current-Continuous
Collector Power Dissipation @Tc=25℃
Junction Temperature
Tstg
Storage Temperature
-10
℃
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
INCHANGE...
