Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min)
Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@IC= -5A
With TO-66 package
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power a
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB550
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@IC= -5A ·With TO-66 package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifiers and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-70
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
5
A
25
W
150
℃
-55~150
℃
isc website：www.iscsemi.
2SB550 Datasheet
