Download 2SB552 Datasheet PDF
Inchange Semiconductor
2SB552
2SB552 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) - High Power Dissipation- : PC= 150W(Max)@TC=25℃ - plement to Type 2SD552 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - High power amplifier applications. - High power switching applications. - DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -220 VCEO Collector-Emitter Voltage -180 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -15 Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction...