2SB553
2SB553 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage
:VCE(sat)= -0.4(V)(Max)@IC= -4A
- plement to Type 2SD553
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High current switching applications.
- Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-70
VCEO Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
Junction Temperature
-7
1.5 W
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB553 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS...
