2SB565 Overview
·Low Collector Saturation Voltage :VCE(sat)= -1.0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL...