Collector-Emitter BreakdownVoltage- : V(BR)CEO= -150V(Min.) - Low Collector Saturation Voltage- : VCE(sat)= -2.0(Max.) @IC= -0.5A - plement to Type 2SD478 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB561 | Hitachi Semiconductor | Silicon PNP Transistor |
| 2SB564 | Micro Electronics | SILICON TRANSISTOR |
| 2SB561 | SeCoS Halbleitertechnologie GmbH | PNP Transistor |
| 2SB562 | Unisonic Technologies | PNP EPITAXIAL SILICON TRANSISTOR |
| 2SB564A | Dc Components | PNP Transistor |
| 2SB564A | Usha | Transistors |
| 2SB566K | Hitachi Semiconductor | Silicon PNP Triple Diffused Type Transistor |
| 2SB561 | Renesas | Silicon PNP Transistor |
