2SB565
2SB565 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Low Collector Saturation Voltage
:VCE(sat)= -1.0(V)(Max)@IC= -2A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-4
Collector Current-Continuous
-4
Collector Current-Peak
Total Power Dissipation @ TC=25℃
Junction Temperature
-8
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS...
