Datasheet Details
| Part number | 2SB565 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.00 KB |
| Description | PNP Transistor |
| Datasheet | 2SB565-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SB565.
| Part number | 2SB565 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.00 KB |
| Description | PNP Transistor |
| Datasheet | 2SB565-INCHANGE.pdf |
|
|
|
·Low Collector Saturation Voltage :VCE(sat)= -1.0(V)(Max)@IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA;
| Part Number | Description |
|---|---|
| 2SB563 | PNP Transistor |
| 2SB566 | PNP Transistor |
| 2SB567 | PNP Transistor |
| 2SB568 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |
| 2SB511 | PNP Transistor |