Datasheet Details
| Part number | 2SB567 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.09 KB |
| Description | PNP Transistor |
| Datasheet | 2SB567-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB567.
| Part number | 2SB567 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.09 KB |
| Description | PNP Transistor |
| Datasheet | 2SB567-INCHANGE.pdf |
|
|
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·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -2.0(Max.) @IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A Collector Power Dissipation@TC=25℃ 30 PC W Collector Power Dissipation@Ta=25℃ 1.8 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB567 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
| Part Number | Description |
|---|---|
| 2SB563 | PNP Transistor |
| 2SB565 | PNP Transistor |
| 2SB566 | PNP Transistor |
| 2SB568 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |
| 2SB511 | PNP Transistor |