2SB676
2SB676 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 2000(Min)@ IC= -1A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
- plement to Type 2SD686
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications.
- Hammer drive, pulse motor drive applications.
- Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-4
Base Current-DC
Collector Power Dissipation TC=25℃
Tj
Junction...
