Datasheet4U Logo Datasheet4U.com

2SB676 Datasheet - INCHANGE

PNP Transistor

2SB676 General Description

*High DC Current Gain- : hFE = 2000(Min)@ IC= -1A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A *Complement to Type 2SD686 *Minimum Lot-to-Lot variations for robust device performance and r.

2SB676 Datasheet (210.13 KB)

Preview of 2SB676 PDF

Datasheet Details

Part number:

2SB676

Manufacturer:

INCHANGE

File Size:

210.13 KB

Description:

Pnp transistor.

📁 Related Datasheet

2SB673 PNP Transistor (INCHANGE)

2SB673 Silicon PNP Transistor (Toshiba)

2SB673 SILICON POWER TRANSISTOR (SavantIC)

2SB674 PNP Transistor (INCHANGE)

2SB674 Silicon PNP Transistor (Toshiba)

2SB674 SILICON POWER TRANSISTOR (SavantIC)

2SB675 PNP Transistor (INCHANGE)

2SB675 Silicon PNP Transistor (Toshiba)

2SB675 SILICON POWER TRANSISTOR (SavantIC)

2SB676 Silicon PNP Transistor (Toshiba)

TAGS

2SB676 PNP Transistor INCHANGE

Image Gallery

2SB676 Datasheet Preview Page 2

2SB676 Distributor