2SB676
2SB676 is Silicon PNP Transistor manufactured by Toshiba.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Features
- High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX., 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc-25°C) Junction Temperature
Storage Temperature Range EQUIVALENT CIRCUIT
BASEO-
SYMBOL RATING UNIT
VCBO
-100
V v CEO
-80
V v EBO
-5
V ic
-4
?C
Tj
°C
1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER
Tst S
-55M.50
°C
COLLECTO...
