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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER)
SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES
• High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A)
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX., 03.6±O.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc-25°C) Junction Temperature
Storage Temperature Range EQUIVALENT CIRCUIT
I
BASEO-
SYMBOL RATING UNIT
VCBO
-100
V
v CEO
-80
V
v EBO
-5
V
ic
-4
A
?C
30
W
Tj
150
°C
1. BASE 2. COLLECTOR (HEAT SINK) a EMITTER
Tst S
-55M.50
°C
COLLECTOR
c
^3oon
VAr—
JBDEC EIAJ
TO 220AB
TOSHIBA
Mounting Kit No. AC75 Weight : 1.
2SB676 Datasheet
