2SB678
2SB678 is SILICON PNP TRANSISTOR manufactured by Toshiba.
FEATURES
:
- High DC Current Gain h FE ( 2 )=1000(Min.) (V CE=-2V, I C=-1A)
Low Saturation Voltage : VCE (sat)=-1.5V(Max. ) (I C=-1A) plementary to 2SD688. j Zfo.45
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Emitter Current
Collector Power Dissipation
(Ta = 25°C) (Tc = 25°C)
Junction Temperature Storage Temperature Range
EQUIVALENT CIRCUIT
SYMBOL Vc BO
'CEO v EBO
Tsts
RATING -100 -100 -10 -1.5 1.5 0.8
175 -65M.75
UNIT V
1. EMITTER 2. BASE 3. COLLECTOR (CASE)
JEDEC
TO-39
TC-5, TB-5B TOSHIBA 2-8B1A
Weight : 1.13g
BASE o c I""
1-
ELECTRICAL CHARACTERISTICS (Ta = 25°c)
CHARACTERISTIC
Collector...
