2SB676 Datasheet

The 2SB676 is a Silicon PNP Transistor.

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Part Number2SB676
ManufacturerToshiba
Overview SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High DC Current Gain : hFE=2.
* High DC Current Gain : hFE=2000 (Min.) (vCE=-2V, I C=-1A) INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX., 03.6±O.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc-25°C) Junction Temperat.
Part Number2SB676
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement t. CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA VBE(sat)) Base-Emitter Saturation Voltage IC= -3A ,IB= -6mA ICBO Collector Cutoff Current VCB= -10.
Part Number2SB676
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications ·Power amplifier appli. ration voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA, IB=0 IC=-3A ,IB=-6mA IC=-3A ,IB=-6mA VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -80 2SB676 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 T.