Inchange Semiconductor 2SB676
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB676 |
|---|---|
| Datasheet | 2SB676 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 2000(Min)@ IC= -1A●Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min)
●Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A
●Complement to Type 2SD686
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching applications.●Hammer drive, pulse motor drive applications.
●Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current-DC PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -300 mA 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB676 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown V...