2SB676 - PNP Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD686 Minimum Lot-to-Lot variations for robust device performance and r

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Datasheet Details

Part number	2SB676
Manufacturer	Inchange Semiconductor
File Size	210.13 KB
Description	PNP Transistor
Datasheet	2SB676 Datasheet

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD686 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications.