Datasheet Details
| Part number | 2SB676 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.13 KB |
| Description | PNP Transistor |
| Datasheet | 2SB676-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB676 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.13 KB |
| Description | PNP Transistor |
| Datasheet | 2SB676-INCHANGE.pdf |
|
|
|
·High DC Current Gain- : hFE = 2000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD686 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications.
·Hammer drive, pulse motor drive applications.
·Power amplifier applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB676 | Silicon PNP Transistor | Toshiba |
 |
2SB676 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB673 | PNP Transistor |
| 2SB674 | PNP Transistor |
| 2SB675 | PNP Transistor |
| 2SB677 | PNP Transistor |
| 2SB679 | Silicon PNP Power Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |