Part 2SB676
Description PNP Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 210.13 KB
Inchange Semiconductor
2SB676

Overview

High DC Current Gain- : hFE = 2000(Min)@ IC= -1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A Complement to Type 2SD686 Minimum Lot-to-Lot variations for robust device performance and reliable operation.