2SB676
2SB676 is PNP Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 2000(Min)@ IC= -1A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -80V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
- plement to Type 2SD686
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications.
- Hammer drive, pulse motor drive applications.
- Power amplifier...
