2SB679
Overview
High Power Dissipation- : PC= 100W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SB679 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 194.76 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SB679 | Toshiba | SILICON PNP TRANSISTOR |
| B673 | SavantIC | 2SB673 |
| 2SB676 | Toshiba | Silicon PNP Transistor |
| 2SB673 | Toshiba | Silicon PNP Transistor |
| 2SB673 | SavantIC | SILICON POWER TRANSISTOR |