2SB679 - SILICON PNP TRANSISTOR

Toshiba

Key Features

: ' High DC Current Gain : hFE(2 )=1000(Min. (V CE=-2V, I C=-1A).
Low Saturation Voltage : VC E(sat)=-1.5V(Max. ) (Ic=-1A).
Complementary to 2SD689.

2SB679 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SB679
Manufacturer	Toshiba
File Size	44.47 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SB679 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB679 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS. PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS. FEATURES : ' High DC Current Gain : hFE(2 )=1000(Min. (V CE=-2V, I C=-1A) • Low Saturation Voltage : VC E(sat)=-1.5V(Max. ) (Ic=-1A) • Complementary to 2SD689. INDUSTRIAL APPLICATIONS Unit in mm 03.6 ± 0.2 MAXIMUM RATINGS (Ta = 25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT J