2SB679 Datasheet

The 2SB679 is a SILICON PNP TRANSISTOR.

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Part Number2SB679
ManufacturerToshiba
Overview 2SB679 SILICON PNP TRIPLE DIFFUSED TYPE (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS. PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS.. : ' High DC Current Gain : hFE(2 )=1000(Min. (V CE=-2V, I C=-1A)
* Low Saturation Voltage : VC E(sat)=-1.5V(Max. ) (Ic=-1A)
* Complementary to 2SD689. INDUSTRIAL APPLICATIONS Unit in mm 03.6 ± 0.2 MAXIMUM RATINGS (Ta = 25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-B.
Part Number2SB679
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 ·Minimum Lot-to-Lot variations for robust device performance . r-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -2A ; VCE= -5.