2SB676 - SILICON POWER TRANSISTOR

SavantIC

General Description

With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter

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2SB676 silicon power transistor by SavantIC - Datasheet Preview

Datasheet Details

Part number	2SB676
Manufacturer	SavantIC
File Size	126.02 KB
Description	SILICON POWER TRANSISTOR
Datasheet	2SB676 Datasheet

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.