SavantIC 2SB676
SILICON POWER TRANSISTOR
| Part No. | 2SB676 |
|---|---|
| Datasheet | 2SB676 Download |
| Manufacturer |  SavantIC |
| Description | SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220C package●High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.)
●DARLINGTON
APPLICATIONS
●For switching applications●Hammer drive, pulse motor drive applications
●Power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA, IB=0 IC=-3A...
