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2SB679 - Silicon PNP Power Transistor

Description

High Power Dissipation- : PC= 100W(Max.)@TC=25℃ Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applica

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isc Silicon PNP Power Transistor 2SB679 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.
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