2SB679 transistor equivalent, silicon pnp power transistor.
*Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
.
*High Power Dissipation-
: PC= 100W(Max.)@TC=25℃
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
*Complement to Type 2SC1079
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIO.
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