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2SB679 Datasheet Preview

2SB679 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
2SB679
DESCRIPTION
·High Power Dissipation-
: PC= 100W(Max.)@TC=25
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
·Complement to Type 2SC1079
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
12
A
100
W
150
Tstg
Storage Temperature
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SB679 Datasheet Preview

2SB679 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A ; VCE= -5V
hFE-2
DC Current Gain
IC= -7A ; VCE= -5V
COB
Output Capacitance
VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -2A ; VCE= -5V
hFE-1 Classifications
R
Y
40-80
70-140
2SB679
MIN TYP. MAX UNIT
-120
V
-5
V
-3.0 V
-2.5 V
-0.1 mA
-0.1 mA
40
140
15
900
pF
6
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SB679
Description Silicon PNP Power Transistor
Maker INCHANGE
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2SB679 Datasheet PDF






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