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2SB731 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -50V(Min) Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -1A DC Current Gain- : hFE= 135-600@IC= -0.1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB731 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -50V(Min) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -1A ·DC Current Gain- : hFE= 135-600@IC= -0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power and low speed switching applications.