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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB754
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min) ·High Collector Current: IC= -7A ·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max) @IC= -4A ·Complement to Type 2SD844 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications. ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
2.
2SB754 Datasheet
