2SB755
2SB755 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
- Good Linearity of h FE
- plement to Type 2SD845
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-12
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-1.2
℃
Tstg
Storage Temperature...
