| Part number | 2SB755 |
|---|---|
| Datasheet | 2SB755-INCHANGE.pdf |
| File Size | 216.95 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·plement to Type 2SD845 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB755 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB755 | SILICON PNP TRANSISTOR | Toshiba |
 |
2SB755 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB753 | PNP Transistor |
| 2SB754 | PNP Transistor |
| 2SB757 | PNP Transistor |
| 2SB703 | PNP Transistor |
| 2SB705 | PNP Transistor |
| 2SB705B | PNP Transistor |
| 2SB707 | PNP Transistor |
| 2SB708 | PNP Transistor |
| 2SB713 | PNP Transistor |
| 2SB719 | PNP Transistor |
