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2SB755 - SILICON POWER TRANSISTOR

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Description

With MT-200 package Complement to type 2SD845 High transition frequency High breakdown voltage :VCEO=-150V(min) APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and

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Datasheet Details

Part number 2SB755
Manufacturer SavantIC
File Size 152.32 KB
Description SILICON POWER TRANSISTOR
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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB755 · DESCRIPTION ·With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High breakdown voltage :VCEO=-150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -12 -1.
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