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2SB755 Datasheet SILICON POWER TRANSISTOR

Manufacturer: SavantIC

Datasheet Details

Part number 2SB755
Manufacturer SavantIC
File Size 152.32 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet 2SB755 Datasheet

General Description

·With MT-200 package ·Complement to type 2SD845 ·High transition frequency ·High breakdown voltage :VCEO=-150V(min) APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-0.1A;

IB=0 IE=-10mA;

IC=0 IC=-5 A;IB=-0.5 A IC=-5A ;

Overview

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors.