Datasheet Details
| Part number | 2SB755 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.95 KB |
| Description | PNP Transistor |
| Download | 2SB755 Download (PDF) |
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| Part number | 2SB755 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.95 KB |
| Description | PNP Transistor |
| Download | 2SB755 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB755 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB755 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB755 | SILICON PNP TRANSISTOR | Toshiba |
 |
2SB755 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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