Datasheet4U Logo Datasheet4U.com

2SB755 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) Good Linearity of hFE Complement to Type 2SD845 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power amplifier applications.

📥 Download Datasheet

Datasheet preview – 2SB755

Datasheet Details

Part number 2SB755
Manufacturer INCHANGE
File Size 216.95 KB
Description PNP Transistor
Datasheet download datasheet 2SB755 Datasheet
Additional preview pages of the 2SB755 datasheet.

📁 Similar Datasheet

  • 2SB755 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB755 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB753 - SILICON PNP TRANSISTOR (Toshiba)
  • 2SB753 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB754 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB754 - Silicon PNP Transistor (Toshiba)
  • 2SB757 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB703 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB705 - Silicon PNP Power Transistors (SavantIC)
  • 2SB705A - Silicon PNP Power Transistors (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB755 isc website：www.iscsemi.
Published: |