2SB886
2SB886 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
: h FE = 1500(Min)@ IC= -4A
- Wide Area of Safe Operation
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -4A
- plement to Type 2SD1196
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-8
Collector Current-Peak
Collector Power Dissipation TC=25℃ PC Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
-12
40...
