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2SB886 Datasheet - INCHANGE

PNP Transistor

2SB886 General Description

*High DC Current Gain- : hFE = 1500(Min)@ IC= -4A *Wide Area of Safe Operation *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -4A *Complement to Type 2SD1196 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS.

2SB886 Datasheet (210.58 KB)

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Datasheet Details

Part number:

2SB886

Manufacturer:

INCHANGE

File Size:

210.58 KB

Description:

Pnp transistor.

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2SB886 PNP Transistor INCHANGE

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