With TO-3 Package
High breakdown voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
for use in horizontal deflection output stages for
color TV receives
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PAR
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1004
DESCRIPTION ·With TO-3 Package ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·for use in horizontal deflection output stages for
color TV receives
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO VEBO
IC IB PC TJ
Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
1100
V
700
V
5
V
0.5
A
0.1
A
50
W
150
℃
-55~150
℃
isc website:www.iscsemi.