2SC1358 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1358 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC=4A; IB= 0.8A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
