Silicon NPN planar type
Complementary to 2SA816
High breakdown voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Medium power amplifier applications
Driver stage amplifier applications
AB
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC1626
DESCRIPTION ·Silicon NPN planar type ·Complementary to 2SA816 ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
80
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.75
A
ICM
Collector Current-Pulsed
Collector Power Dissipation
@ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
1.5 W
10
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SC1626 Datasheet
