High hFE(1)=100-320
1 Watts Amplifier Applications
Complement to Type 2SA950
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collecto
Full PDF Text Transcription for 2SC2120 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC2120. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Transistor DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device pe...
View more extracted text
ent to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC2120 VALUE UNIT 35 V 30 V 5 V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.
2SC2120 Datasheet
